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N-Channel Enhancement FET
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Product Details
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Drain-Source Breakdown Voltage (Vds): | 60V |
| Continuous Drain Current (Id): | 200mA |
| Drain-Source Resistance (Rds On): | 5Ohms |
| Gate-Source Voltage (Vgs): | 20V |
| Configuration: | Single |
| Power Dissipation (Pd): | 400mW |
| Operating Temperature Range: | -55 ~ 150°C |
| Package: | TO-92-3L |